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SI9804DY-T1 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI9804DY-T1

Small Signal Field-Effect Transistor, 7.8AI(D),25V,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 2000

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25
Drain Current-Max (ID) 7.8
Drain-source On Resistance-Max 0.023
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON