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SI9945BDY-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI9945BDY-T1-GE3

SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8


Ordering Info

In Stock: 695000 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-694999 $0.4429
695000+ $0.4133


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 5.3
Drain Current-Max (ID) 5.3
Drain-source On Resistance-Max 0.058
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON