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SIHG25N50E-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SIHG25N50E-GE3

500V, 26A, 0.145 OHM, TO-247AC


Ordering Info

In Stock: 500 Delivery

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500+ $2.43


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Electrical Characteristics

Avalanche Energy Rating (Eas) 273
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (ID) 26
Drain-source On Resistance-Max 0.145
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 50
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON