Request Quote













Request Quote


SIHG47N60EF-GE3 | VISHAY/SILICONIX

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

VISHAY/SILICONIX SIHG47N60EF-GE3

EF-Series N-Channel 600 V 379 W 65 mO 228 nC Flange Mount Power Mosfet -TO-247AC


Ordering Info

In Stock: 9500 Delivery

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
500-9499 $9.47
9500+ $8.84


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 1500
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (ID) 47
Drain-source On Resistance-Max 0.065
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 138
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON