Request Quote













Request Quote


SIHG47N60EF-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SIHG47N60EF-GE3

EF-Series N-Channel 600 V 379 W 65 mO 228 nC Flange Mount Power Mosfet -TO-247AC


Ordering Info

In Stock: 6500 Delivery

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.00.55

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500-6499 $22.80
6500+ $20.52


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 1500
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (ID) 47
Drain-source On Resistance-Max 0.065
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 138
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON