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SIHG70N60EF-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SIHG70N60EF-GE3

Power Field-Effect Transistor, 70AI(D),600V,0.038ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-247AC


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 25

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 1706
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (ID) 70
Drain-source On Resistance-Max 0.038
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 229
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON