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VISHAY/SILICONIX SIHG73N60E-GE3
Ordering Info
In Stock: 800 Delivery
MOQ: 25
Package Quantity: 25
HTS Code: 8541.29.00
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 25-799 | $14.67 |
| 800+ | $13.20 |
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Electrical Characteristics
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 2030 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 |
| Drain Current-Max (Abs) (ID) | 73 |
| Drain Current-Max (ID) | 73 |
| Drain-source On Resistance-Max | 0.039 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 520 |
| Pulsed Drain Current-Max (IDM) | 236 |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |