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SIHP15N50E-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SIHP15N50E-GE3

E-Series N-Channel 500 V 156 W 0.243 O 66 nC Flange Mount Power Mosfet -TO-220AB


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Avalanche Energy Rating (Eas) 136
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (ID) 14.5
Drain-source On Resistance-Max 0.28
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON