Name:
Company Name:
Project Name:
Email Address:
Phone Number:
Part Number:
Manufacturer:
Quantity:
Target Price:
Comments:

Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901

Download the free Library Loader to convert this file for your ECAD Tool.

VISHAY/SILICONIX SIHP7N60E-GE3

E-Series N-Channel 600 V 78 W 0.6 O 40 nC Flange Mount Power Mosfet- TO-220AB

In Stock: 0

MOQ: 50

Package Quantity: 50

COO: CN

Subject to tariff fees.

Quantity	Cost
50	-


Avalanche Energy Rating (Eas)	43
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600
Drain Current-Max (Abs) (ID)	7
Drain Current-Max (ID)	7
Drain-source On Resistance-Max	0.6
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	78
Pulsed Drain Current-Max (IDM)	18
Sub Category	FET General Purpose Powers
Surface Mount	NO
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON