Request Quote













Request Quote


SIR882DP-T1-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SIR882DP-T1-GE3

SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8


RoHS Compliant

Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000+ $1.42


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 45
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 60
Drain Current-Max (ID) 60
Drain-source On Resistance-Max 0.0087
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83
Pulsed Drain Current-Max (IDM) 80
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON