Request Quote













Request Quote


SIR882DP-T1-GE3 | VISHAY/SILICONIX

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

VISHAY/SILICONIX SIR882DP-T1-GE3

SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 45
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 60
Drain Current-Max (ID) 60
Drain-source On Resistance-Max 0.0087
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83
Pulsed Drain Current-Max (IDM) 80
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON