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SMS15T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR SMS15T1G


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Breakdown Voltage-Max 18.5
Breakdown Voltage-Min 16.7
Breakdown Voltage-Nom 17.6
Clamping Voltage-Max 24
Configuration COMMON ANODE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 350
Number of Elements 4
Number of Terminals 6
Operating Temperature-Max 150
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 15
Sub Category Transient Suppressors
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40