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ON SEMICONDUCTOR SMUN5311DW1T3G
SC88-6/Complementary Bipolar Digital Transistor (BRT)
Ordering Info
In Stock: 0
MOQ: 10000
Package Quantity: 10000
ECCN: EAR99
COO: CN
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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 10000 | - |
Electrical Characteristics
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Collector Current-Max (IC) | 0.1 |
| Collector-emitter Voltage-Max | 50 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| DC Current Gain-Min (hFE) | 35 |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | NPN AND PNP |
| Power Dissipation-Max (Abs) | 0.385 |
| Reference Standard | AEC-Q101 |
| Sub Category | BIP General Purpose Small Signal |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |