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Electrical Characteristics
| Configuration | Single |
| Drain Current-Max (Abs) (ID) | 2.8 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Temperature-Max | 175 |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3.3 |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Time@Peak Reflow Temperature-Max (s) | 40 |