Request Quote













Request Quote


SQ2361ES-T1_GE3 | VISHAY/SILICONIX

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

VISHAY/SILICONIX SQ2361ES-T1_GE3

P-Channel 60 V 0.177 ? 12 nC SMT TrenchFET PowerMosfet - SOT-23


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.30
6000+ $0.28


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 2.8
Drain-source On Resistance-Max .177
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 42
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON