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SQ4917EY-T1_GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SQ4917EY-T1_GE3

SQ4917EY Series 60 V 48 mOhm SMT Automotive Dual P-Channel Mosfet - SO-8


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
2500 -

Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 8
Drain-source On Resistance-Max 0.048
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 142
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON