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SST215 | CALOGIC

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CALOGIC SST215

** Leaded ** cutt (DMOS) MOSFET Transistor, N-Channel, TO-253


Ordering Info

In Stock: 0

MOQ: 2500

Lead Time: 12 weeks

Package Quantity: 2500

Quantity Cost
2500-7499 $2.59
7500+ $2.47


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Electrical Characteristics

Case Connection SUBSTRATE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) .05
Drain Current-Max (ID) .05
Drain-source On Resistance-Max 70
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) .5
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .36
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON