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Electrical Characteristics
| Case Connection | SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (Abs) (ID) | .05 |
| Drain Current-Max (ID) | .05 |
| Drain-source On Resistance-Max | 70 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | .5 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 125 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | .36 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |