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SST215-T1 | VISHAY/SILICONIX

VISHAY/SILICONIX SST215-T1

Small Signal Field-Effect Transistor, 0.05AI(D),20V, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-253AA


Ordering Info

In Stock: 2485

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1-99 $1.15
100-499 $1.09
500+ $1.00


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Electrical Characteristics

Additional Feature ESD PROTECTED
Case Connection SUBSTRATE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (ID) 0.05
Drain-source On Resistance-Max 75
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.5
JEDEC-95 Code TO-253AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON