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CALOGIC SST309

RF Small Signal Field-EffectTransistor,1-Element,Ultra High Frequency Band,Silicon,N-Channel,Junction FET


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

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Quantity Cost
2500-7499 $0.79
7500-14999 $0.73
15000+ $0.71


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Electrical Characteristics

Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 25
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2.5
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 135
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .36
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON