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Electrical Characteristics
| Additional Feature | LOW NOISE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 25 |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 2.5 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 135 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | .36 |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |