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STB100NF04T4 | ST MICROELECTRONICS

ST MICROELECTRONICS STB100NF04T4

N-Channel 40 V 0.0046 Ohm Surface Mount STripFET II Power MosFet - D2PAK


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

COO: CN

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Electrical Characteristics

Avalanche Energy Rating (Eas) 1200
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40
Drain Current-Max (Abs) (ID) 120
Drain Current-Max (ID) 120
Drain-source On Resistance-Max 0.0046
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300
Pulsed Drain Current-Max (IDM) 480
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON