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| Quantity | Cost |
|---|---|
| - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 200 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 950 |
| Drain Current-Max (Abs) (ID) | 17.5 |
| Drain Current-Max (ID) | 17.5 |
| Drain-source On Resistance-Max | 0.33 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 250 |
| Pulsed Drain Current-Max (IDM) | 70 |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |