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STB6NK90ZT4 | ST MICROELECTRONICS

ST MICROELECTRONICS STB6NK90ZT4

Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3


Ordering Info

In Stock: 8

MOQ: 1

Package Quantity: 1

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Quantity Cost
1+ $3.81


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 300
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900
Drain Current-Max (Abs) (ID) 5.8
Drain Current-Max (ID) 5.8
Drain-source On Resistance-Max 2
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140
Pulsed Drain Current-Max (IDM) 23.2
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON