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STD13N65M2 | ST MICROELECTRONICS

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ST MICROELECTRONICS STD13N65M2

Power Field-Effect Transistor,N-Channel,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

Quantity Cost
2500 -

Electrical Characteristics

Configuration Single
Drain Current-Max (Abs) (ID) 10
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max 150
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110
Sub Category FET General Purpose Power
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED