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STD3NM60T4 | ST MICROELECTRONICS

ST MICROELECTRONICS STD3NM60T4

Power Field-Effect Transistor, 3A I(D),600V,1.5ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252


Ordering Info

In Stock: 4925

MOQ: 1

Package Quantity: 1

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Quantity Cost
1-999 $1.06
1000-3999 $0.76
4000+ $0.62


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Electrical Characteristics

Avalanche Energy Rating (Eas) 200
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (Abs) (ID) 3
Drain Current-Max (ID) 3
Drain-source On Resistance-Max 1.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50
Pulsed Drain Current-Max (IDM) 12
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON