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Ordering Info
In Stock: 0
MOQ: 1
Package Quantity: 1
COO: CN
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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1 | - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 400 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 |
| Drain Current-Max (Abs) (ID) | 45 |
| Drain Current-Max (ID) | 32 |
| Drain-source On Resistance-Max | 0.008 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30 |
| Pulsed Drain Current-Max (IDM) | 180 |
| Sub Category | FET General Purpose Powers |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |