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STGB10NB37LZT4 | ST MICROELECTRONICS

ST MICROELECTRONICS STGB10NB37LZT4

STGB10NB37LZ Series 410 V 10 A Flange Mount Internally Clamped IGBT - D2PAK


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000 -

Electrical Characteristics

Additional Feature VOLTAGE CLAMPING
Case Connection COLLECTOR
Collector Current-Max (IC) 20
Collector-emitter Voltage-Max 375
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-emitter Thr Voltage-Max 2.4
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 17800
Turn-on Time-Nom (ton) 860