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Electrical Characteristics
| Collector Current-Max (IC) | 25 |
| Collector-emitter Voltage-Max | 600 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-emitter Thr Voltage-Max | 5.75 |
| Gate-emitter Voltage-Max | 20 |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 80 |
| Qualification Status | Not Qualified |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 221 |
| Turn-on Time-Nom (ton) | 25.5 |