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STGD3HF60HDT4 | ST MICROELECTRONICS

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ST MICROELECTRONICS STGD3HF60HDT4

STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

COO: CN

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Quantity Cost
2500 -

Electrical Characteristics

Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 13
Collector-emitter Voltage-Max 600
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5.75
Gate-emitter Voltage-Max 20
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON