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STGD3HF60HDT4 | ST MICROELECTRONICS

ST MICROELECTRONICS STGD3HF60HDT4

STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 13
Collector-emitter Voltage-Max 600
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5.75
Gate-emitter Voltage-Max 20
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON