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Learn more about ECAD Model here.Electrical Characteristics
| Collector Current-Max (IC) | 60 |
| Collector-emitter Voltage-Max | 1200 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-emitter Thr Voltage-Max | 5.75 |
| Gate-emitter Voltage-Max | 25 |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 170 |
| Qualification Status | Not Qualified |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | NO |
| Terminal Finish | TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 928 |
| Turn-on Time-Nom (ton) | 41 |