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STGWA25H120F2 | ST MICROELECTRONICS

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ST MICROELECTRONICS STGWA25H120F2

Insulated Gate Bipolar Transistor, 50AI(C),1200VV(BR)CES, N-Channel


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 30

Package Quantity: 30

Quantity Cost
30 -

Electrical Characteristics

Collector Current-Max (IC) 50
Collector-emitter Voltage-Max 1200
Gate-emitter Thr Voltage-Max 7
Gate-emitter Voltage-Max 20
Operating Temperature-Max 175
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED