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STGWA40M120DF3 | ST MICROELECTRONICS

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ST MICROELECTRONICS STGWA40M120DF3

Insulated Gate Bipolar Transistor, 80AI(C),1200VV(BR)CES, N-Channel


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Collector Current-Max (IC) 80
Collector-emitter Voltage-Max 1200
Gate-emitter Thr Voltage-Max 7
Gate-emitter Voltage-Max 20
Operating Temperature-Max 175
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 468
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED