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STGWA80H65FB | ST MICROELECTRONICS

ST MICROELECTRONICS STGWA80H65FB

Insulated Gate Bipolar Transistor, 120AI(C),650VV(BR)CES, N-Channel


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 30

Package Quantity: 30

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
30 -

Electrical Characteristics

Collector Current-Max (IC) 120
Collector-emitter Voltage-Max 650
Gate-emitter Thr Voltage-Max 7
Gate-emitter Voltage-Max 20
Operating Temperature-Max 175
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 469
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED