Request Quote













Request Quote


STH110N10F7-6 | ST MICROELECTRONICS

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ST MICROELECTRONICS STH110N10F7-6

Power Field-Effect Transistor,N-Channel,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Configuration Single
Drain Current-Max (Abs) (ID) 110
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max 175
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150
Sub Category FET General Purpose Power
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED