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Ordering Info
In Stock: 0
MOQ: 3000
Package Quantity: 3000
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 3000 | - |
Electrical Characteristics
| Additional Feature | ULTRA LOW-ON RESISTANCE |
| Avalanche Energy Rating (Eas) | 150 |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 |
| Drain Current-Max (Abs) (ID) | 60 |
| Drain Current-Max (ID) | 15 |
| Drain-source On Resistance-Max | 0.009 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F6 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60 |
| Pulsed Drain Current-Max (IDM) | 60 |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |