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ST MICROELECTRONICS STP100N10F7

Single N-Channel 100 V 0.008 Ohm 61 nC 150 W Flange Mount Mosfet - TO-220-3

In Stock: 0

MOQ: 100

Package Quantity: 50

COO: CN

Subject to tariff fees.

Quantity	Cost
100	-


Avalanche Energy Rating (Eas)	400
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100
Drain Current-Max (Abs) (ID)	80
Drain Current-Max (ID)	80
Drain-source On Resistance-Max	0.008
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	150
Pulsed Drain Current-Max (IDM)	320
Sub Category	FET General Purpose Powers
Surface Mount	NO
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON