Request Quote













Request Quote


STP11NM60 | ST MICROELECTRONICS

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ST MICROELECTRONICS STP11NM60

N-Channel 650 V 0.45 Ohm Flange Mount MDmeshâ„¢ Power MosFet - TO-220


Ordering Info

In Stock: 300

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 350
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (Abs) (ID) 11
Drain Current-Max (ID) 11
Drain-source On Resistance-Max 0.45
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110
Pulsed Drain Current-Max (IDM) 44
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON