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STP60NF06FP | ST MICROELECTRONICS

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ST MICROELECTRONICS STP60NF06FP

N-Channel 60 V 16 mOhm STripFET II Power MosFet - TO-220FP


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 50

Package Quantity: 50

Quantity Cost
50 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 370
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 30
Drain Current-Max (ID) 30
Drain-source On Resistance-Max 0.016
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30
Pulsed Drain Current-Max (IDM) 120
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON