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STP80NF55-06 | ST MICROELECTRONICS

ST MICROELECTRONICS STP80NF55-06

N-Channel 55 V 6.5 mOhm Flange Mount STripFET II Power Mosfet - TO-220


RoHS Compliant

Ordering Info

In Stock: 0

Package Quantity: 50

HTS Code: 8541.29.0095

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
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Electrical Characteristics

Avalanche Energy Rating (Eas) 1300
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 80
Drain Current-Max (ID) 80
Drain-source On Resistance-Max 0.0065
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 210
Pulsed Drain Current-Max (IDM) 320
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON