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Ordering Info
In Stock: 0
MOQ: 3000
Package Quantity: 3000
COO: CN
Subject to tariff fees.
Quantity | Cost |
---|---|
3000 | - |
Electrical Characteristics
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 |
Drain Current-Max (ID) | 2.3 |
Drain-source On Resistance-Max | .04 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |