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STR2N2VH5 | ST MICROELECTRONICS

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ST MICROELECTRONICS STR2N2VH5


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (ID) 2.3
Drain-source On Resistance-Max .04
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON