Request Quote













Request Quote


STS7C4F30L | ST MICROELECTRONICS

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ST MICROELECTRONICS STS7C4F30L

Power Field-Effect Transistor, 7AI(D),30V,0.026ohm, 2-Element, N-ChannelandP-Channel,Silicon, Metal-oxide Semiconductor FET


Ordering Info

In Stock: 19

MOQ: 1

Package Quantity: 1

HTS Code: 8541.29.0095

ECCN: EAR99

Quantity Cost
1+ $2.54


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 4
Drain Current-Max (ID) 7
Drain-source On Resistance-Max 0.026
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2
Pulsed Drain Current-Max (IDM) 28
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON