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STY60NM50 | ST MICROELECTRONICS

ST MICROELECTRONICS STY60NM50

TO 247 MAX/9063P10


Ordering Info

In Stock: 0

MOQ: 30

Package Quantity: 30

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
30 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 1400
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 60
Drain Current-Max (ID) 60
Drain-source On Resistance-Max .05
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 450
Pulsed Drain Current-Max (IDM) 240
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON