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SUP75N08-10 | VISHAY/SILICONIX

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VISHAY/SILICONIX SUP75N08-10

Power Field-Effect Transistor, 75AI(D),75V,0.01ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-220AB


Ordering Info

In Stock: 0

MOQ: 4

Package Quantity: 4

HTS Code: 8541.29.0095

ECCN: EAR99

Quantity Cost
4+ $28.00


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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75
Drain Current-Max (ID) 75
Drain-source On Resistance-Max 0.01
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON