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SZESD7462N2T5G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR SZESD7462N2T5G


Ordering Info

In Stock: 0

MOQ: 8000

Package Quantity: 8000

COO: CN

Subject to tariff fees.

Quantity Cost
8000 -

Electrical Characteristics

Breakdown Voltage-Max 28
Breakdown Voltage-Min 16.5
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PBCC-N2
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL
Power Dissipation-Max .3
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 16
Surface Mount YES
Technology AVALANCHE
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED