Request Quote













Request Quote


SZNUP3105LT1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR SZNUP3105LT1G

TransVoltageSuppressorDiode,350W,32VV(RWM),Bidirectional, 2Element,Silicon


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.10.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature LOW CAPACITANCE
Breakdown Voltage-Min 35.6
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 350
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-5
Rep Pk Reverse Voltage-Max 32
Surface Mount YES
Technology ZENER
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED