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SiHG30N60E-GE3 | VISHAY

VISHAY SiHG30N60E-GE3

Power Field-Effect Transistor, 29A I(D), 600V,0.125ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-247AC


RoHS Compliant

Ordering Info

In Stock: 50 Delivery

MOQ: 25

Package Quantity: 25

ECCN: EAR99

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
25-49 $21.13
50+ $19.02


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Electrical Characteristics

Avalanche Energy Rating (Eas) 690
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (Abs) (ID) 29
Drain Current-Max (ID) 29
Drain-source On Resistance-Max 0.125
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250
Pulsed Drain Current-Max (IDM) 65
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON