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SiHP22N60E-GE3 | VISHAY

VISHAY SiHP22N60E-GE3


RoHS Compliant

Ordering Info

In Stock: 1900 Delivery

MOQ: 50

Package Quantity: 50

ECCN: EAR99

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
50-1899 $14.21
1900+ $12.79


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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 367
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (Abs) (ID) 21
Drain Current-Max (ID) 21
Drain-source On Resistance-Max 0.18
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 227
Pulsed Drain Current-Max (IDM) 56
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON