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TIP117 | ON SEMICONDUCTOR

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ON SEMICONDUCTOR TIP117

Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, PNP, Silicon,TO-220AB,Plastic/Epoxy, 3Pin


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In Stock: 0

Package Quantity: 1

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Electrical Characteristics

Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection COLLECTOR
Collector Current-Max (IC) 2
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 500
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 50
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25