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TN0200K-T1-E3 | VISHAY/SILICONIX

VISHAY/SILICONIX TN0200K-T1-E3

Small Signal Field-Effect Transistor,0.73AI(D),20V, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-236


Ordering Info

In Stock: 0

MOQ: 1255

Package Quantity: 1255

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Quantity Cost
1255+ $0.29


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.73
Drain Current-Max (ID) 0.73
Drain-source On Resistance-Max 0.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.35
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON