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TPS1120DR | TEXAS INSTRUMENTS

TEXAS INSTRUMENTS TPS1120DR

Small Signal Field-Effect Transistor, 1.17A I(D),15V, 2-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET, MS-012AA


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 15
Drain Current-Max (Abs) (ID) 1.17
Drain Current-Max (ID) 1.17
Drain-source On Resistance-Max 0.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.84
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON