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TPS1120DR | TEXAS INSTRUMENTS

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TEXAS INSTRUMENTS TPS1120DR

Small Signal Field-Effect Transistor,1.17AI(D),15V, 2-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET, MS-012AA


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 15
Drain Current-Max (Abs) (ID) 1.17
Drain Current-Max (ID) 1.17
Drain-source On Resistance-Max 0.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.84
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON