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TSM3443CX6RFG | TAIWAN SEMICONDUCTOR

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TAIWAN SEMICONDUCTOR TSM3443CX6RFG


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

ECCN: EAR99

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature ULTRA-LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (ID) 4.7
Drain-source On Resistance-Max 0.06
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 20
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON